Atomistic Analysis of Thermoelectric Properties of Silicon Nanowires

نویسندگان

  • Neophytos Neophytou
  • Martin Wagner
  • Hans Kosina
چکیده

The spds-spin-orbit-coupled tight-binding model and linearized Boltzmann transport theory is applied to calculate the electrical conductivity, the Seebeck coefficient, and the power factor of silicon nanowires (NWs) with diameters D<12nm. Using experimentally measured values for the lattice thermal conductivity we estimate the room temperature thermoelectric figure of merit to be ZT~1. Keywords— nanowires, thermoelectrics, power factor, Seebeck, Boltzmann, bandstructure, surface roughness scattering.

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تاریخ انتشار 2010